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| ? top view 8 1 2 3 4 5 6 7 d d d d g s a s s a ! ! "# $ % & ' (#)( * 100% r g tested (* halogen-free * +,-*, ' . ! / (# ( % 0! # 1 ' % 2 $ 3 '$ ( % ( ( ! ( / ( ( # ( +,-*, 4 *, 5 3% # ( ( 1 ' ( $ ( # ! ( # %% 2 6 $ '( ( ! ! ' / ( ( ' ( ' ( '! % ( % $ ' 5 ( # % %% 27 '% # ' 3'! % ( # $ ! ( %% ( ' (! ( $ ( % 2 % 5 ( ( # % % 3 (3 # ( 0! 24 ( % 8267 % $ % 4 9'! %% 2 so-8 s y mbol parameter units v ds drain-to-source volta g e v gs gate-to-source volta g e i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm p u l se d d ra i n c urren t p d @t a = 25c power dissipation w linear derating factor mw/c e as si n gl e p u l se a va l anc h e e ner g enc y mj dv/dt peak diode recovery dv/dt v/ns t j, t stg junction and storage temperature range c s y mbol parameter t y pmaxunits r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 v 2.5 max 30 20 13 thermal resistance ratings absolute maximum ratings c/w 9.2 5.0 0.02 260 -55 to +150 58 www.irf.com 1 pd - 96250 www.irf.com 2 !" # i sd $%& %'&( ( & ) *+, ! ) -.*+,&/- 01 -.* ? &2 - $% !3 .# 4 $' .5 ! " 367 ) +, symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.034 ??? v/c ??? ??? 0.011 ??? ??? 0.018 v gs(th) gate threshold voltage 1.0 ??? 3.0 v g fs forward transconductance 10 ??? ??? s ??? ??? 12 ??? ??? 25 gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 q g total gate charge ??? 52 79 q gs gate-to-source charge ??? 6.1 9.2 nc q gd gate-to-drain ("miller") charge ??? 16 23 r g gate resistance ??? ??? 3.7 ? t d(on) turn-on delay time ??? 8.6 ??? t r rise time ??? 50 ??? t d(off) turn-off delay time ??? 52 ??? ns t f fall time ??? 46 ??? c iss input capacitance ??? 1800 ??? c oss output capacitance ??? 680 ??? c rss reverse transfer capacitance ??? 240 ??? symbol parameter min. typ. max. units continuous source current (body diode) a pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 74 110 ns q rr reverse recovery charge ??? 200 300 nc i sm ??? ??? 58 i s i dss drain-to-source leakage current a i gss pf 3.1 ??? ??? na ? v gs = 4.5v, i d = 3.7a static drain-to-source on-resistance v gs = 10v, i d = 7.3a r ds(on) v ds = v gs , i d = 250a v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c mosfet symbol v ds = 10v, i d = 3.7a i d = 7.3a v ds = 24v conditions r g = 2.0 ?, see fig. 10 v gs = 0v r g = 6.2 ? v ds = 25v ? = 1.0mhz, see fig. 5 t j = 25c, i s = 7.3a, v gs = 0v t j = 25c, i f = 7.3a di/dt = 100a/s showing the integral reverse p-n junction diode. electrical characteristics @ tj = 25c (unless otherwise specified) source-drain ratings and characteristics v gs = 10v, see fig. 6 and 9 v dd = 15v i d = 7.3a v gs = -20v v gs = 20v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma www.irf.com 3 1 10 100 0.1 1 10 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 3.5 4.0 4.5 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 7.3a d www.irf.com 4 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms !" # $ $ 0 400 800 1200 1600 2000 2400 2800 3200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 102030405060 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 i = 7.3a v = 24v v = 15v d ds ds 1 10 100 0.4 1.2 2.0 2.8 3.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a www.irf.com 5 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) !"% & ' () #* v ds 90% 10% v gs t d(on) t r t d(off) t f +& ( ( 1 0.1 % ( ( 8 9 ) + - ,$ +& d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge -. $ www.irf.com 6 !"#& % / ' & +& / ' & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 3.3a 6.0a 7.3a www.irf.com 7 0%1 % p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 2 ( -*(" / / 8 ( ? ? 8 8 9 ) ? 2 8 3 :8: ? 8 9 ) 68 9 ) , / , ? / ! 2 ? ; 4 ? / /<2 , ) " 2 www.irf.com 8 so-8 package outline (mosfet & fetky) ! " ## $%$ ! ! ! $ $ & ! dimensions are shown in milimeters (inches) so-8 part marking information www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in milimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2009 |
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